国家/地区 美国（10） 世界知识产权组织（8） 中国（7） 日本（7） 欧洲专利局（EPO）（6） 韩国（2）
IPC部 H（13） B（9） C（6）
G（3）
IPC大类 H01（13） B82（9） C01（5）
B32（3） B05（2） C23（2）
G11（2）
IPC小类 H01L（13） B82Y（8） C01B（5）
B32B（3） H01B（3） B05D（2）
G11C（2）
IPC H01L029/16（13）
发明人 KONDO D（3） SATO S（3） HAQUE S（2）
HAQUE S M（2） LEHTINIEMI R（2） LEHTINIEMI R K（2）
公开年 2010（8） 2011（3）
申请年 2009（13）
专利权人 FUJITSU LTD（3） NOKIA CORP（2） NOKIA TECHNO.（2）

Semiconductor device manufacturing method, involves forming catalyze membrane on insulator, forming graphene layer with electric conduction film, matching conduction film with insulator, and performing graphene layer thin changing process.

KONDO D, SATO S

Manufacturing method of semiconductor device for, e.g. personal computer (PC), involves forming conductive film touching graphene layer on insulator.

KONDO D, SATO S

Method for forming tunable bandgap in graphene-based switching device, involves creating bandgap in bi-layer graphene by reducing interlayer spacing between bi-layer graphene.

LIN Y, YAU J

Electronic device, used as e.g. field effect transistor, comprises underlayer constructed of highly ordered crystalline material and overlayer constructed of crystalline material having high dielectric constant, and a layer of n-graphene.

MARINERO E E, PISANA S, MARINORO E E

Electronic device comprises porous graphene layer including graphene nanoribbon and electrically connecting two graphene electrodes.

KAERKKAEINEN A M, HAQUE S M, COLLI A, PASANEN P M, JOHANNES K L M, UUSITALO M A, LEHTINIEMI R K, KARKKAAINEN A M, HAQUE S, KARKKAINEN L M J, KARKKAINEN L, UUSITALO M, LEHTINIEMI R, KARKKAINEN L M Y, KAERKKAEINEN L M J

Graphite structure of electronic component e.g. thermoelectric conversion element, has domains that are formed by laminated structure of graphene sheet that are arranged in plane, such that adjacent domains are connected.

KONDO D, SATO S, IWAI T

Method for providing electrical connection to portion of graphene layer used in e.g. microelectronic device, involves forming recess that create boundary between first portion of recess and second portion of recess.

HAQUE S, LEHTINIEMI R K, KARKKAINEN A M, LECHNER L, HAKONEN P, HAQUE S M, LEHTINIEMI R, KAERKKAEINEN A

Graphene structure for electronic device elements, contains graphene fixed to substrate in which bonding is formed between portion to which hydrophilic process is performed, or portion to which hydrophilic process is not performed.

SANDHU A

Graphene-based memory cell for non-volatile memory, has graphene layer having controllable resistance states representing data values of the cell and ferroelectric layer controlling the resistance states.

NI G X, OEZYILMAZ B, TOH C T, ZHENG Y, NI G, TOH C, DU Z

Graphene material in the form of sheet, ribbon or polyphenylene molecule, films, optical and electronic devices is pristine in the interior of the plane and functionalized at its edges.

DAI H, LI X, SUN X